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2SC4703 Hoja de datos - NEC => Renesas Technology

2SC4703 image

Número de pieza
2SC4703

Other PDF
  no available.

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page
8 Pages

File Size
64.2 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE= 5 V).  This low  distortion characteristic makes it suitable for CATV, tele-communication and other use.  It employs surface mount type plastic package, Power Mini Mold (SOT-89).


FEATURES
• Low distortion at low supply voltage.
    IM2 -55 dB TYP., IM3 76 dB TYP.
     )     @VCE= 5 V, IC= 50 mA, VO= 105 dB/75
• Large PTwith surface mount type package.


Número de pieza
componentes Descripción
PDF
Fabricante
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology

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