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2SC5307 Hoja de datos - Toshiba

2SC5307 image

Número de pieza
2SC5307

componentes Descripción
TOSHIBA Transistor Silicon NPN Triple Diffused Type

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page
4 Pages

File Size
137.1 kB

Fabricante
Toshiba
Toshiba Toshiba

High Voltage Switching Applications

• High breakdown voltage : VCEO = 400 V
• Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)

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Número de pieza
componentes Descripción
PDF
Fabricante
2SC5242
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Ver
Toshiba
2SC5354
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
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2SC5358
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
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2SC5359
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Ver
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2SC5459
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5460
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5465
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Ver
Toshiba
2SC5548A
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5549
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Ver
Toshiba
2SC5550
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba

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