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2SC5545ZS-TL-E Hoja de datos - Renesas Electronics

2SC5545 image

Número de pieza
2SC5545ZS-TL-E

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page
8 Pages

File Size
76.7 kB

Fabricante
Renesas
Renesas Electronics Renesas

Features
• Excellent inter modulation characteristic
• High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

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Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Ver
Renesas Electronics
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF / UHF wide band amplifier
Ver
Renesas Electronics
Silicon NPN Epitaxial VHF / UHF wide band amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF / UHF Wide band amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF wide band amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF wide band amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
Ver
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Ver
Renesas Electronics
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Ver
Renesas Electronics

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