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2SC6026 Hoja de datos - Toshiba

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Número de pieza
2SC6026

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Toshiba
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General-Purpose Amplifier Applications

• High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
• Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE : hFE = 120~400
• Complementary to 2SA2154
• Lead (Pb) free

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Número de pieza
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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