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2SD1407A-R Hoja de datos - Toshiba

2SD1407A image

Número de pieza
2SD1407A-R

componentes Descripción
TOSHIBA Transistor Silicon NPN Triple Diffused Type

Other PDF
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page
4 Pages

File Size
123 kB

Fabricante
Toshiba
Toshiba Toshiba

Power Amplifier Applications

• High breakdown voltage: VCEO = 100 V
• Low collector saturation voltage: VCE (sat) = 2.0 V (max)
• Complementary to 2SB1016A

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
2SC5242
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Ver
Toshiba
2SC5354
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Ver
Toshiba
2SC5358
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Ver
Toshiba
2SC5359
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Ver
Toshiba
2SC5459
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5460
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5465
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Ver
Toshiba
2SC5548A
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba
2SC5549
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Ver
Toshiba
2SC5550
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Ver
Toshiba

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