2SD1761 Hoja de datos - Jiangsu Changjiang Electronics Technology Co., Ltd
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2SD1761
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3 Pages
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429.8 kB
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Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (NPN)
FEATURES
• Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
• Excellent Current Characteristics of DC Current Gain.
• Large Collector Power Dissipation: PC=30W(TC=25℃)
• Complementary Pair with 2SB1187
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Fabricante
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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