2SD1761 Hoja de datos - ROHM Semiconductor
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2SD1761
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ROHM Semiconductor
Low Feq. Power Amp.
Triple Diffused Planar NPN Silicon Transistor
FEATUREs
1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
2) Excellent current characteristics of DC current gain.
3) Large collector power dissipation: PC=30W(TC=25℃)
4) Complementary pair with 2SB1187
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