2SD1922 Hoja de datos - Hitachi -> Renesas Electronics
Número de pieza
2SD1922
componentes Descripción
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6 Pages
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Hitachi -> Renesas Electronics
- Collector to base voltage V CBO : 25 V
- Collector to emitter voltage V CEO : 25 V
- Emitter to base voltage V EBO : 6V
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PDF
Fabricante
NPN epitaxial silicon transistor. Low frequency power amplifier
Wing Shing International Group
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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ( Rev : 2011 )
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