datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Secos Corporation.  >>> 2SD2114 PDF

2SD2114(2005) Hoja de datos - Secos Corporation.

2SD2114 image

Número de pieza
2SD2114

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
3 Pages

File Size
403.7 kB

Fabricante
Secos
Secos Corporation. Secos

FEATURES
• High DC current gain :hFE = 1200(Typ)
• High emitter-base voltage. VEBO =12V (Min.)
• Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)

Page Link's: 1  2  3 

Número de pieza
componentes Descripción
PDF
Fabricante
0.5 A, 25 V NPN Plastic Encapsulated Transistor
Ver
Secos Corporation.
0.5 A, 60 V NPN Plastic Encapsulated Transistor
Ver
Secos Corporation.
0.5 A , 35 V NPN Plastic Encapsulated Transistor ( Rev : 2011 )
Ver
Secos Corporation.
0.5 A , 35 V NPN Plastic Encapsulated Transistor ( Rev : 2012 )
Ver
Secos Corporation.
0.5 A, 80 V NPN Plastic Encapsulated Transistor
Ver
Secos Corporation.
0.3 A, 25 V NPN Plastic Encapsulated Transistor
Ver
Secos Corporation.
0.5 A, 350V NPN Plastic Encapsulated Transistor
Ver
Secos Corporation.
-0.5 A, -60 V PNP Plastic Encapsulated Transistor
Ver
Secos Corporation.
-0.5 A, -350 V PNP Plastic Encapsulated Transistor
Ver
Secos Corporation.
-0.5 A, -30 V PNP Plastic Encapsulated Transistor
Ver
Secos Corporation.

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]