2SD2114K(2012) Hoja de datos - ROHM Semiconductor
Número de pieza
2SD2114K
componentes Descripción
Other PDF
PDF
page
4 Pages
File Size
155 kB
Fabricante
ROHM Semiconductor
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
Número de pieza
componentes Descripción
PDF
Fabricante
High Current Gain Medium Power NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Share Link: