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2SD2136 Hoja de datos - Inchange Semiconductor

2SD2136 image

Número de pieza
2SD2136

componentes Descripción

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page
2 Pages

File Size
241.8 kB

Fabricante
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 60V(Min)
• DC Current Gain-
   : hFE=40-250@IC = 1A
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 1.2 V(Max)@ IC = 3A
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation


APPLICATIONS
• Designed for power switching applications.


Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
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New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
Inchange Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
New Jersey Semiconductor
Silicon NPN Power Transistor
Ver
Inchange Semiconductor

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