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2SD2696 Hoja de datos - ROHM Semiconductor

2SD2696 image

Número de pieza
2SD2696

Other PDF
  2009   2015  

PDF
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page
2 Pages

File Size
38.5 kB

Fabricante
ROHM
ROHM Semiconductor ROHM

Features
1) The transistor of 400mA class which went only with 2012
   size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
   VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA


APPLICATIONs
   Switching


Número de pieza
componentes Descripción
PDF
Fabricante
For low frequency general amplification
Ver
SANYO -> Panasonic
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JILIN SINO-MICROELECTRONICS CO., LTD.
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Ver
Jilin Sino-Microelectronics
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Ver
Unspecified
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Ver
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Ver
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Ver
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Ver
NEC => Renesas Technology

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