2SD864 Hoja de datos - Inchange Semiconductor
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2SD864
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Inchange Semiconductor
DESCRIPTION
·High DC Current Gain : hFE = 1000(Min)@ IC= 1.5A
·Collector-Emitter Breakdown Voltage : V(BR)CEO = 120V(Min)
·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max)@ IC= 1.5A
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
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