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2SJ479L-E Hoja de datos - Renesas Electronics

2SJ479L image

Número de pieza
2SJ479L-E

componentes Descripción
Silicon P Channel MOS FET

Other PDF
  no available.

PDF
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page
8 Pages

File Size
79.3 kB

Fabricante
Renesas
Renesas Electronics Renesas

Description
High speed power switching


FEATUREs
• Low on-resistance RDS (on) = 25 mΩ typ.
• 4 V gate drive devices.
• High speed switching

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