2SJ495 Hoja de datos - NEC => Renesas Technology
Número de pieza
2SJ495
componentes Descripción
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8 Pages
File Size
72.2 kB
Fabricante
NEC => Renesas Technology
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A)
RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A)
• Low CissCiss= 4120 pF TYP.
• Built-in Gate Protection Diode
Número de pieza
componentes Descripción
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