2SK1529 - Toshiba Hoja de datos

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2SK1529 Hoja de datos - Toshiba

Número de pieza

2SK1529

componentes Descripción

Silicon N-Channel MOS Type Field Effect Transistor

Other PDF

1998 2006

PDF

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page

4 Pages

File Size

257.4 kB

Fabricante

Toshiba

High-Power Amplifier Application

● High breakdown voltage : VDSS = 180 V
● High forward transfer admittance : |Yfs| = 4.0 S (typ.)
● Complementary to 2SJ200

Número de pieza

componentes Descripción

PDF

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