2SK2605(1998) Hoja de datos - Toshiba
Número de pieza
2SK2605
componentes Descripción
Other PDF
PDF
page
5 Pages
File Size
276.6 kB
Fabricante
Toshiba
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
SWITCHING REGULATOR APPLICATIONS
• Low Drain−Source ON Resistance : RDS (ON) = 1.9 Ω (Typ.)
• High Forward Transfer Admittance : |Yfs| = 3.8 S (Typ.)
• Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 640 V)
• Enhancement-Mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
Share Link: