2SK2611 Hoja de datos - Toshiba
Número de pieza
2SK2611
componentes Descripción
PDF
page
6 Pages
File Size
415.3 kB
Fabricante
Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
● Low drain−source ON-resistance : RDS (ON) = 1.2 Ω (typ.)
● High forward transfer admittance : |Yfs| = 7.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
● Enhancement−mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
Share Link: