2SK2996(2009) Hoja de datos - Toshiba
Número de pieza
2SK2996
componentes Descripción
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6 Pages
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Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
• Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)
• High forward transfer admittance : |Yfs| = 6.8 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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componentes Descripción
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
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