2SK3070 Hoja de datos - Renesas Electronics
Número de pieza
2SK3070
componentes Descripción
Other PDF
no available.
PDF
page
9 Pages
File Size
88.2 kB
Fabricante
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
FEATUREs
• Low on-resistance RDS(on)=4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Número de pieza
componentes Descripción
PDF
Fabricante
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Share Link: