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2SK3430-Z Hoja de datos - NEC => Renesas Technology

2SK3430 image

Número de pieza
2SK3430-Z

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page
8 Pages

File Size
77.5 kB

Fabricante
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SK3430 is N-channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Super low on-state resistance:
   RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID = 40 A)
   RDS(on)2 = 15 mΩ MAX. (VGS = 4 V, ID = 40 A)
• Low Ciss: Ciss = 2800 pF TYP.
• Built-in gate protection diode


Número de pieza
componentes Descripción
PDF
Fabricante
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Ver
TY Semiconductor

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