2SK3868 - Toshiba Hoja de datos

HOME >>> Toshiba >>> 2SK3868 PDF

2SK3868(2004) Hoja de datos - Toshiba

Número de pieza

2SK3868

componentes Descripción

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)

Other PDF

lastest PDF

PDF

DOWNLOAD

page

6 Pages

File Size

72.2 kB

Fabricante

Toshiba

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.)
• High forward transfer admittance: |Yfs| = 3S (typ.)
• Low leakage current: IDSS = 100 μ A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Número de pieza

componentes Descripción

PDF

Fabricante

SSM6L09FU

TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI)

Ver

Toshiba

SSM3J16FV

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)

Ver

Toshiba

TJ20A10M3

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)

Ver

Toshiba

SSM3J16FS

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)

Ver

Toshiba

TPC8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)

Ver

Toshiba

SSM3J334R

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

Ver

Toshiba

SSM3J16FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)

Ver

Toshiba

SSM6P16FE

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)

Ver

Toshiba

SSM6P16FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)

Ver

Toshiba

SSM3J334R

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI) ( Rev : 2014 )

Ver

Toshiba

Share Link:

English

한국어

简体中文

日本語

русский