2SK3934(2006) Hoja de datos - Toshiba
Número de pieza
2SK3934
componentes Descripción
Other PDF
PDF
page
6 Pages
File Size
283.6 kB
Fabricante
Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.23Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
Share Link: