Features
• VDS (V) = 150V
• Max rDS(on) = 56 mȍ at VGS = 10 V, ID = 4.4 A
• Max rDS(on) = 71 mȍ at VGS = 6 V, ID = 3.8 A
• Max rDS(on) = 75 mȍ at VGS = 4.5 V, ID = 3.7 A
• Advanced package and silicon combination for
   low rDS(on) and high efficiency
• Next generation enhanced body diode technology, 
   engineered for soft recovery