Features
• Low on-resistance
• Built-in gate protection diode
APPLICATIONs
• Electric power steering
• High current switching
Key Specifications
• V(BR)DSS = 60V (ID=100μA)
• RDS(ON) = 4.8mΩ max. (VGS=10V, ID=35A)
• RDS(ON) = 6.0mΩ max. (VGS=8V, ID=35A)