2SK660 Hoja de datos - NEC => Renesas Technology
Número de pieza
2SK660
componentes Descripción
Other PDF
no available.
PDF
page
8 Pages
File Size
35.8 kB
Fabricante
NEC => Renesas Technology
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
• Compact package
• High forward transfer admittance
| yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
• Low capacitance
Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)
• Includes diode and high resistance at G - S
Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
NEC => Renesas Technology
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