Fabricante
![UTC](/logo/UTC.png)
Unisonic Technologies
![UTC](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics. This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
FEATURES
* RDS(ON) = 40mΩ@VGS = 10 V, ID=15A
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
Número de pieza
componentes Descripción
PDF
Fabricante
60V, 30A N-CHANNEL POWER MOSFET
Unisonic Technologies
60V, 30A N-CHANNEL POWER MOSFET ( Rev : 2011 )
Unisonic Technologies
60V, 30A N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel Power MOSFET 60V, 30A, 26mΩ, TO-220F-3SG
ON Semiconductor
30A, 100V N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel Power MOSFET 30A, 200Volts
Nell Semiconductor Co., Ltd
30A, 200V N-CHANNEL POWER MOSFET
Unisonic Technologies
30A, 100V N-CHANNEL POWER MOSFET ( Rev : 2014 )
Unisonic Technologies
30A, 100V N-CHANNEL POWER MOSFET ( Rev : 2012 )
Unisonic Technologies
60V N-Channel Power MOSFET
TSC Corporation