4N60B Hoja de datos - Xian Semipower Electronic Technology Co., Ltd.
Número de pieza
4N60B
componentes Descripción
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no available.
PDF
page
7 Pages
File Size
915.3 kB
Fabricante
Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
FEATUREs
■ High ruggedness
■ RDS(ON) (Max 2.5 Ω)@VGS=10V
■ Gate Charge (Typ 11nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
Número de pieza
componentes Descripción
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Fabricante
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