Description
The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost
glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping.

FEATUREs
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available