Description
The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3 V logic. An over‐current protection (OCP) function which terminates all six outputs can also be derived from this resistor. An open drain FAULT signal is provided to indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network.

FEATUREs
• Infineon Thin-Film-SOI technology
• Fully operational to +1200 V
• Integrated Ultra‐fast Bootstrap Diode
• Floating channel designed for bootstrap operation
• Output source/sink current capability +0.35 A/‐0.65 A
• Tolerant to negative transient voltage up to -100 V
   (Pulse width is up 700 ns) given by SOI-technology
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Over current protection with ±5% ITRIP threshold
• Fault reporting, automatic Fault clear and
   Enable function on the same pin (RFE)
• Matched propagation delay for all channels
• Integrated 460 ns deadtime protection
• Shoot-through (cross-conduction) protection

Typical applications
• Industrial Drives
• Embedded inverters for Motor Control in Pumps, Fans.
• Commercial and Lite Commercial Air Conditioning