DESCRIPTION
The MD56V62160E is a 4-Bank x 1,048,576-word x 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES
• Silicon gate, quadruple poly-silicon CMOS, 1-transistor memory cell
• 4-Bank x 1,048,576-word x 16-bit configuration
• Single 3.3 V power supply, 0.3 V tolerances
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
    - CAS Latency (2, 3)
    - Burst Length (1, 2, 4, 8, Full Page)
    - Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Packages:
    54-pin 400 mil plastic TSOP (TypeII) (P-TSOP(2)54-400-0.80-UK6) (Product: MD56V62160E-xxTA)
                                                                                              xx indicates speed rank.