DESCRIPTION
The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 50 W MIN. WITH 6 dB GAIN