8H02 Hoja de datos - Toshiba
Número de pieza
8H02
componentes Descripción
Other PDF
PDF
page
8 Pages
File Size
236.9 kB
Fabricante
Toshiba
STROBE FLASH APPLICATIONS
HIGH-SPEED SWITCHING APPLICATIONS
DC-DC CONVERTER APPLICATIONS
• Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
(NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)
Número de pieza
componentes Descripción
PDF
Fabricante
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type Multi-Chip Transistor
Toshiba
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor, Field Effect Transistor Silicon N Cannel MOS Type
Toshiba
Share Link: