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8N60H Hoja de datos - KIA Semiconductor Technology

8N60H image

Número de pieza
8N60H

componentes Descripción

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page
6 Pages

File Size
196.8 kB

Fabricante
KIA
KIA Semiconductor Technology KIA

Description
The KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATUREs
◾ RDS(on)=0.98Ω @ VGS=10V
◾ Ultra low gate charge (typical 29nC)
◾ Fast switching capability
◾ Avalanche energy tested
◾ Improved dv/dt capability,


Número de pieza
componentes Descripción
PDF
Fabricante
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600V N-Channel MOSFET ( Rev : 2003 )
Ver
Fairchild Semiconductor

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