A1049(1996) Hoja de datos - Toshiba
Número de pieza
A1049
componentes Descripción
Other PDF
PDF
page
2 Pages
File Size
135.6 kB
Fabricante
Toshiba
AUDIO FREQUENCY AMPLIFIER APPLICATIONS
• Small Package.
• High Breakdown Voltage: VCEO= −120 V (Min.)
• High hFE: hFE= 200~700
• Excellent hFE Linearity
: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (Typ.)
• Low Noise: NF = 1dB (Typ.), 10dB (Max.)
• Complementary to 2SC2459.
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
Share Link: