A1296 Hoja de datos - Toshiba
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A1296
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Toshiba
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat)= −0.5 V (max) @IC= −2 A
• Complementary to 2SC3266.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
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