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A1977 Hoja de datos - Renesas Electronics

2SA1977 image

Número de pieza
A1977

Other PDF
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page
14 Pages

File Size
158.7 kB

Fabricante
Renesas
Renesas Electronics Renesas

FEATURES
• High fT
   fT = 8.5 GHz TYP.
• High gain
   | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
• Equivalent NPN transistor is the 2SC3583.


Número de pieza
componentes Descripción
PDF
Fabricante
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Ver
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Ver
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Ver
NEC => Renesas Technology
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Ver
California Eastern Laboratories.
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
Ver
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Ver
NEC => Renesas Technology

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