Description
The A33-1 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.

FEATUREs
• ULTRAWIDE BANDWIDTH: 1-2600 MHz (TYP.)
• MEDIUM OUTPUT LEVEL: +6 dBm (TYP.)