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ADG636YRU-REEL Hoja de datos - Analog Devices

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Número de pieza
ADG636YRU-REEL

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16 Pages

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269.5 kB

Fabricante
ADI
Analog Devices ADI

GENERAL DESCRIPTION
The ADG636 is a monolithic device, comprising two independently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.


FEATURES
   1 pC charge injection
   ±2.7 V to ±5.5 V dual supply
   +2.7 V to +5.5 V single supply
   Automotive temperature range: −40°C to +125°C
   100 pA (maximum at 25°C) leakage currents
   85 Ω typical on resistance
   Rail-to-rail operation
   Fast switching times
   Typical power consumption (<0.1 μW)
   TTL-/CMOS-compatible inputs
   14-lead TSSOP package


APPLICATIONS
   Automatic test equipment
   Data acquisition systems
   Battery-powered instruments
   Communication systems
   Sample-and-hold systems
   Remote-powered equipment
   Audio and video signal routing
   Relay replacement
   Avionics

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Número de pieza
componentes Descripción
PDF
Fabricante
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V, Quad SPST Switches
Ver
Analog Devices
1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer
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1 pC Charge Injection, 100 pA Leakage, CMOS 5 V/+5 V/+3 V Quad SPST Switches
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Analog Devices
1 pC Charge Injection, 100 pA Leakage CMOS ±5 V/5 V/3 V 4-Channel Multiplexer ( Rev : Rev0 )
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Analog Devices
CMOS, ±5 V/+5 V/+3 V, Triple SPDT Switch
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Analog Devices
CMOS ±5 V/+5 V/+3 V Triple SPDT Switch ( Rev : Rev0 )
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CMOS, ±5 V/+5 V/+3 V, Triple SPDT Switch ( Rev : RevB )
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Analog Devices
2 pF Off Capacitance, 1 pC Charge Injection, ±15 V/12 V iCMOS™ Dual SPDT Switch
Ver
Analog Devices
CMOS ±5 V/+5 V 4Ω Single SPDT Switches ( Rev : RevA )
Ver
Analog Devices
2 pF Off Capacitance, 1 pC Charge Injection, ±15 V/12 V iCMOS™ Dual SPDT Switch ( Rev : RevPrD )
Ver
Analog Devices

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