Description
The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.

FEATUREs
■ 24 dBm Output Power @ 18 GHz
■ High Associated Gain, 8.5 dB @ 18 GHz
■ High Power Added Efficiency, 20%
■ Broadband Operation, DC–40 GHz
■ 0.25 µm Ti/Pd/Au Gates
■ Passivated Surface
■ Through-Substrate Via Hole Grounding