Description
The AFP02N8-000 general purpose PHEMT chip has excellent gain and noise performance through X band, making it suitable for a wide range of commercial and military applications.The device employs 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part.

FEATUREs
■ Low Noise Figure, 1.25 dB @ 4 GHz
■ High Associated Gain, 15.0 dB @ 4 GHz
■ High MAG, > 18 dB @ 4 GHz
■ 0.7 µm Ti/Pd/Au Gates
■ Passivated Surface