RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs

These 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
   IDQA = 860 mA, VGSB = 0.9 Vdc, Pout = 100 W Avg., Input Signal
   PAR = 9.9 dB @ 0.01% Probability on CCDF.

FEATUREs
• Production Tested in a Symmetrical Doherty Configuration
• Greater Negative Gate--Source Voltage Range for Improved Class C
   Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.