GENERAL DESCRIPTION
   The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21536. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
• Single power supply operation
   — 2.7 to 3.6 volt read and write operations for
      battery-powered applications
• Manufactured on 0.32 µm process
   technology
   — Compatible with 0.5 µm Am29LV800 device
• High performance
   — Access times as fast as 70 ns
• Ultra low power consumption (typical
   values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 7 mA read current
   — 15 mA program/e+5rase current
• Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      fifteen 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      fifteen 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      A hardware method of locking a sector to prevent
      any program or erase operations within that sector
      Sectors can be locked in-system or via
      programming equipment
      Temporary Sector Unprotect feature allows code
      changes in previously locked sectors
• Unlock Bypass Program Command
   — Reduces overall programming time when
      issuing multiple program command sequences
• Top or bottom boot block configurations
   available
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