DESCRIPTION
The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 − 2.3 GHz frequency range.
Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provided in the industry-standard AMPAC™ metal/ceramic hermetic package and incorporates internal input and output impedance matching structures along with a rugged, emitter-site ballasted overlay die geometry.
AM82223-010 is capable of withstanding ∞:1 load mismatch at any phase angle under full rated operating conditions.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ ∞:1 VSWR CAPABILITY AT RATED CONDITIONS
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 9 W MIN. WITH 6.5 dB GAIN