30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ
RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ
RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ
FEATUREs
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance