30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-4.2A < 64mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120mΩ
FEATUREs
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance