Description：
This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application.

FEATUREs：
   N-Channel: VDS=60V,ID=4.5A,RDS(ON)<40mΩ @VGS=10V
   P-Channel: VDS=-60V,ID=-4.1A,RDS(ON)<90mΩ @VGS=-10V
   1) High Power and current handing capability.
   2) Lead free product is acquired.
   3) Surface Mount Package.