General Description
The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

FEATUREs
VDS @ Tj,max                    700V
IDM                                     45A
RDS(ON),max                    0.399Ω
Qg,typ                                11nC
Eoss @ 400V                     2.7µJ