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Número de pieza
AQW224N

componentes Descripción

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Matsushita Electric Works Nais

RF (Radio Frequency) Type [2-Channel (Form A) Type]
—Low On resistance—


FEATURES
1. PhotoMOS relay 2-channels (Form A) type with high response speed, low leakage current and low On resistance.
2. Applicable for 2 Form A use as well as two independent 1 Form A use
3. Compact 8-pin DIP size
   The device comes in a compact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type).
4. Low capacitance between output terminals ensures high response speed:
   The capacitance between output terminals is small, typically 10 pF. This enables for a fast operation speed of 200 µs.
5. High sensitivity and low On resistance:
   Maximum 0.16 A of load current can be controlled with input current of 5 mA (AQW225N). The 10 Ω On resistance is less than our conventional models. With no metallic contacts, the PhotoMOS relay has stable switching characteristics.
6. Low-level off state leakage current:
   The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 30 pA even with the rated load voltage of 80 V (AQW225N).
7. Controls low-level analog signals:
   PhotoMOS relay features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion.
8. Low terminals electromotive force: (approx. 1 µV)

TYPICAL APPLICATIONS
• Measuring equipment
• Scanner, IC checker, Board tester

 

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