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AS29F010 Hoja de datos - Alliance Semiconductor

AS29F010 image

Número de pieza
AS29F010

componentes Descripción

Other PDF
  no available.

PDF
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page
10 Pages

File Size
102.4 kB

Fabricante
Alliance
Alliance Semiconductor Alliance

Functional description
The AS29F010 is a high performance 1 megabit 5 volt-only Flash memory organized as 128K bytes of 8 bits each. It is divided into four sectors of 32K bytes each. Each sector is separately erased and programmed without affecting data in the other sectors. All prog ram, erase, and verify operations are 5-volt only, and require no external 12V supply pin. All required features for in-system programmability are provided.


FEATUREs
• Organization: 128K × 8 bits
• Sector Erase architecture
    - Four 32K × 8 sectors
• Single 5.0±0.5V power supply for read/write operations
• High speed 120/150 ns address access time
• Low power consumption:
    - 30 mA maximum read current
    - 50 mA maximum program current
    - 1.5 mA maximum standby current
    - 1 mA maximum standby current (low power)
• 10,000 write/erase cycle endurance
• JEDEC standard write cycle commands
    - protects data from accidental changes
• Program/erase cycle end signals:
    - Data polling
    - DQ6 toggle
• Low VCC write lock-out below 3.2V
• JEDEC standard packages and pinouts:
    - 32-pin DIP
    - 32-pin PLCC
    - 32-pin TSOP

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
5V 128K x 8 CMOS Flash EEPROM
Ver
Alliance Semiconductor
5V 256K x 8/128K x 8 CMOS Flash EEPROM
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5V 256K x 8/128K x 8 CMOS FLASH EEPROM
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5V 512K x 8 CMOS FLASH EEPROM
Ver
Alliance Semiconductor
5V 512K x 8 CMOS FLASH EEPROM
Ver
Alliance Semiconductor
5V 128K X 8 CMOS SRAM
Ver
Alliance Semiconductor
5V 128K X 8 CMOS SRAM
Ver
Alliance Semiconductor
128K x 8 CMOS FLASH MEMORY
Ver
Winbond
128K x 8 CMOS FLASH MEMORY
Ver
Winbond
128K x 8 CMOS FLASH MEMORY
Ver
Winbond

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